Substitutional Doping in 2D materials
Why it matters
Doping is an effective form of tailoring the physical properties of materials, and has been a fundamental technology to the modern semiconductor industry. The modulation of doping concentration and uniformity is arguably the most important techniques in creating high quality functional materials.
C. Su, Q. Ji, Z. Chen, J. Zhou, G. Chen, D. Muller, J.-C. Idrobo, J. Li, J. Kong, “Uniform vanadium doping of large domain MoS2 assisted by halide salts”, in-preparation.
Q. Ji∗, C. Su∗,† (equal contribution), N. Mao, X. Tian, J.-C. Idrobo, J. Miao, W. A. Tisdale, A. Zettl, J. Li, J. Kong, “Revealing the Brønsted-Evans-Polanyi Relation in Halide-Activated Fast MoS2 Growth Towards Millimeter-Sized 2D Crystals”, submitted. (†corresponding author)
P.-C. Shen, Y. Lin, C. McGahan, C. Su, A.-Y. Lu, X. Ji, X. Wang, H. Wang, N. Mao, Y. Guo, J.-H. Park, Y.Wang, J. Li, X. Ling, K. E. Aidala, T. Palacios, and J. Kong, “Healing of donor defect states in monolayermolybdenum disulfide transistors”, under review.